The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Jul. 12, 2010
Applicants:
Haruka Shimizu, Kodaira, JP;
Natsuki Yokoyama, Mitaka, JP;
Inventors:
Haruka Shimizu, Kodaira, JP;
Natsuki Yokoyama, Mitaka, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is no effective method for fabricating a semiconductor power device containing UMOSFET possessing large channel mobility and whose threshold voltage can be lowered with no loss in blocking voltage. A semiconductor device with large blocking voltage is provided utilizing silicon carbide trench MOSFET possessing both narrow regions where the p body concentration is low, and wide regions where the p body concentration is high.
Shimizu, Haruka. (2013). Semiconductor device with large blocking voltage and manufacturing method thereof (U.S. Patent No. 8564060). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8564060
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile