The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Jun. 21, 2012
Andrew Gabriel Rinzler, Newberry, FL (US);
BO Liu, Gainesville, FL (US);
Mitchell Austin Mccarthy, Gainesville, FL (US);
John Robert Reynolds, Gainesville, FL (US);
Franky SO, Gainesville, FL (US);
Andrew Gabriel Rinzler, Newberry, FL (US);
Bo Liu, Gainesville, FL (US);
Mitchell Austin McCarthy, Gainesville, FL (US);
John Robert Reynolds, Gainesville, FL (US);
Franky So, Gainesville, FL (US);
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Abstract
Embodiments of the invention relate to field effect transistors. The field effect transistor includes a gate electrode for providing a gate field, a first electrode including a conductive material having a low carrier density and a low density of electronic states, a second electrode, and a semiconductor. Contact barrier modulation includes barrier height lowering of a Schottky contact between the first electrode and the semiconductor. In some embodiments of the invention, a vertical field effect transistor employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.