The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8564038 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 22, 2013

Filed:

Sep. 18, 2011
Applicant:

Masato Sugawara, Kawasaki, JP;

Inventor:

Masato Sugawara, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a second conductive layer is provided on a second insulating film and connected to a first conductive layer via an opening portion in the second insulating film. A first contact is connected to the second conductive layer. A third conductive layer is provided on the second insulating film and connected to the first conductive layer via an opening portion in the second insulating film. A second contact is connected to the third conductive layer. A fourth conductive layer is provided on the second insulating film and connected to the first conductive layer via an opening portion in the second insulating film. A third contact is connected to the fourth conductive layer. The floating gate layer and the first conductive layer are made of the same material, and the control gate layer, the second, third and fourth conductive layers are made of the same material.


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Sugawara, Masato. (2013). Nonvolatile semiconductor memory device including resistive element (U.S. Patent No. 8564038). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8564038

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