The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Jul. 07, 2010
Yoshihisa Warashina, Hamamatsu, JP;
Masatoshi Ishihara, Hamamatsu, JP;
Tomofumi Suzuki, Hamamatsu, JP;
Yoshihisa Warashina, Hamamatsu, JP;
Masatoshi Ishihara, Hamamatsu, JP;
Tomofumi Suzuki, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
In a photodetector, a low-resistance Si substrate, an insulating layer, a high-resistance Si substrate, and an Si photodiodeconstruct a hermetically sealed package for an InGaAs photodiodeplaced within a recess, while an electric passage partof the low-resistance Si substrateand a wiring filmachieve electric wiring for the Si photodiodeand InGaAs photodiode. While a p-type regionof the Si photodiodeis disposed in a part on the rear faceside of an Si substrate, a p-type regionof the InGaAs photodiodeis disposed in a part on the front faceside of an InGaAs substrate