The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Mar. 06, 2008
Hsung Jai Im, Cupertino, CA (US);
Sunhom Paak, San Jose, CA (US);
Boon Yong Ang, Santa Clara, CA (US);
Hsung Jai Im, Cupertino, CA (US);
Sunhom Paak, San Jose, CA (US);
Boon Yong Ang, Santa Clara, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
At least one MOS parameter of a MOS fuse is characterized to provide at least one MOS parameter reference value. Then, the MOS fuse is programmed by applying a programming signal to the fuse terminals so that programming current flows through the fuse link. The fuse resistance is measured to provide a measured fuse resistance associated with a first logic value. A MOS parameter of the programmed MOS fuse is measured to provide a measured MOS parameter value. The measured MOS parameter value is compared to the reference MOS parameter value to determine a second logic value of the MOS fuse, and a bit value is output based on the comparison.