The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Oct. 27, 2011
Masao Uchida, Osaka, JP;
Koutarou Tanaka, Osaka, JP;
Masao Uchida, Osaka, JP;
Koutarou Tanaka, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
As viewed along a normal to the principal surface of a substrate, this semiconductor elementhas a unit cell regionand a terminal regionlocated between the unit cell region and an edge of the semiconductor element. The terminal regionincludes a ring regionof a second conductivity type which is arranged in a first silicon carbide semiconductor layerso as to contact with a drift region. The ring region includes a high concentration ring regionwhich contacts with the surface of the first silicon carbide semiconductor layer and a low concentration ring regionwhich contains an impurity of the second conductivity type at a lower concentration than in the high concentration ring region and of which the bottom contacts with the first silicon carbide semiconductor layer. A side surface of the high concentration ring regioncontacts with the drift region. As viewed along a normal to the principal surface of the semiconductor substrate, the high concentration ring region and the low concentration ring region are identical in contour.