The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Feb. 14, 2012
Haruyuki Sorada, Okayama, JP;
Haruyuki Sorada, Okayama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The semiconductor deviceof this invention includes: a semiconductor layerarranged on the principal surface of a substrateand made of a wide bandgap semiconductor; a trenchwhich is arranged in the semiconductor layerand which has a bottom and a side surface; an insulating regionarranged on the bottom and side surface of the trench; and a conductive layerarranged in the trenchand insulated from the semiconductor layerby the insulating region. The insulating regionincludes a gate insulating filmarranged on the bottom and the side surface of the trenchand a gaparranged between the gate insulating filmand the conductive layerat the bottom of the trench. The gate insulating filmcontacts with the conductive layeron a portion of the side surface of the trenchbut does not contact with the conductive layerat the bottom of the trench. The thickness of the insulating regionmeasured from the bottom of the trenchthrough the lower surface of the conductive layeris greater around the center of the trench than beside its side surface.