The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Sep. 18, 2008
Applicants:
Mikio Shimada, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Hideya Kumomi, Tokyo, JP;
Inventors:
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/16 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/16 (2013.01); H01L 33/0054 (2013.01);
Abstract
A transistor is constituted of a gate electrode, a gate insulation layer, a semiconductor layerformed of an amorphous oxide, a source electrode, a drain electrodeand a protective layer. The protective layeris provided on the semiconductor layerin contact with the semiconductor layer, and the semiconductor layerincludes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrodeside of the semiconductor layerand the second layer is provided on the protective layerside of the semiconductor layer