The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Apr. 03, 2009
Satoshi Tokuda, Kusatsu, JP;
Tamotsu Okamoto, Kisarazu, JP;
Hiroyuki Kishihara, Kizugawa, JP;
Masatomo Kaino, Kyoto-fu, JP;
Toshinori Yoshimuta, Takatsuki, JP;
Koichi Tanabe, Uji, JP;
Satoshi Tokuda, Kusatsu, JP;
Tamotsu Okamoto, Kisarazu, JP;
Hiroyuki Kishihara, Kizugawa, JP;
Masatomo Kaino, Kyoto-fu, JP;
Toshinori Yoshimuta, Takatsuki, JP;
Koichi Tanabe, Uji, JP;
Shimadzu Corporation, Kyoto, JP;
Institute of National Colleges of Technology, Japan, Tokyo, JP;
Abstract
According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.