The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Apr. 28, 2008
Yi MA, Santa Clara, CA (US);
Robert Bertram Ogle, San Jose, CA (US);
Yi Ma, Santa Clara, CA (US);
Robert Bertram Ogle, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Methods for fabricating a semiconductor FIN structure with smooth sidewalls and rounded top corners and edges is disclosed. A method includes forming a plurality of semiconductor FIN structures. A sacrificial oxide layer is formed on the top surface and the sidewall surfaces of the plurality of semiconductor FIN structures for rounding the corners and edges between the top surfaces and the sidewall surfaces of the plurality of semiconductor FIN structures. The sacrificial oxide layer is removed with a high selectivity oxide etchant. The plurality of semiconductor FIN structures are annealed in a hydrogen environment. A tunnel oxide is formed over the plurality of semiconductor FIN structures.