The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Aug. 08, 2011
Kyu-tae Kim, Yongin-si, KR;
Jong-seo Hong, Yongin-si, KP;
Kyu-Tae Kim, Yongin-si, KR;
Jong-Seo Hong, Yongin-si, KP;
Abstract
A method of fabricating a semiconductor device includes forming gate patterns on a substrate, forming spacers on sidewalls of the gate patterns, forming a first capping insulation layer pattern on the gate patterns and the spacers, forming a second capping insulation layer pattern on the first capping insulation layer pattern, forming a passivation layer pattern filling contact holes between the gate patterns, removing the second capping insulation layer pattern while protecting the spacers using the passivation layer pattern, removing the passivation layer pattern to expose a top surface of the substrate, forming a silicide forming metal film on the surface of the substrate, and forming silicide patterns on the exposed top surface of the substrate.