The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2013

Filed:

May. 25, 2011
Applicants:

Satoshi Eguchi, Kanagawa, JP;

Hitoshi Seshimo, Kanagawa, JP;

Naoko Shimizu, Kanagawa, JP;

Inventors:

Satoshi Eguchi, Kanagawa, JP;

Hitoshi Seshimo, Kanagawa, JP;

Naoko Shimizu, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device which prevents damage to alignment marks used for alignment between a superjunction structure and process layers at subsequent steps. In the related art, recesses are made in a semiconductor substrate before the formation of the superjunction structure and used as alignment marks and in order to prevent damage to the alignment marks, the alignment marks are covered by an insulating film such as a silicon oxide film during the subsequent process of forming the superjunction structure, but the inventors have found that damage may penetrate the cover film, reach the semiconductor substrate and destroy the marks. In the method according to the invention, alignment marks for alignment between the superjunction structure and process layers at subsequent steps are formed after the formation of the superjunction structure.


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