The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Jan. 18, 2008
Leo Mathew, Austin, TX (US);
Tushar P. Merchant, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Leo Mathew, Austin, TX (US);
Tushar P. Merchant, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A phase change memory (PCM) cell includes a transistor, a PCM structure, and a heater. The transistor has a first current electrode and a second current electrode in a structure, and a channel region having a first portion along a first sidewall of the structure and having a second portion along a second sidewall of the structure. The second sidewall is opposite the first sidewall. The transistor has a control electrode that has a first portion adjacent to the first sidewall and a second portion adjacent to the second sidewall. The PCM structure exhibits first and second resistive values when in first and second phase states, respectively. The heater is on the structure and produces heat when current flows through the heater for changing the phase state of the phase change structure.