The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Mar. 13, 2012
Steven J. Adler, Saratoga, CA (US);
Peter Johnson, Sunnyvale, CA (US);
Gokhan Percin, Los Gatos, CA (US);
Shahram Mostafazadeh, San Jose, CA (US);
Steven J. Adler, Saratoga, CA (US);
Peter Johnson, Sunnyvale, CA (US);
Gokhan Percin, Los Gatos, CA (US);
Shahram Mostafazadeh, San Jose, CA (US);
National Semiconductor Corporated, Santa Clara, CA (US);
Abstract
A method for forming a capacitive micromachined ultrasonic transducer (CMUT) includes forming multiple CMUT elements in a first semiconductor-on-insulator (SOI) structure. Each CMUT element includes multiple CMUT cells. The first SOI structure includes a first handle wafer, a first buried layer, and a first active layer. The method also includes forming a membrane over the CMUT elements and forming electrical contacts through the first handle wafer and the first buried layer. The electrical contacts are in electrical connection with the CMUT elements. The membrane could be formed by bonding a second SOI structure to the first SOI structure, where the second SOI structure includes a second handle wafer, a second buried layer, and a second active layer. The second handle wafer and the second buried layer can be removed, and the membrane includes the second active layer.