The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8562737 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 22, 2013

Filed:

Jun. 13, 2008
Applicants:

Seiji Sarayama, Miyagi, JP;

Masahiko Shimada, Miyagi, JP;

Hisanori Yamane, Miyagi, JP;

Masato Aoki, Miyagi, JP;

Inventors:

Seiji Sarayama, Miyagi, JP;

Masahiko Shimada, Miyagi, JP;

Hisanori Yamane, Miyagi, JP;

Masato Aoki, Miyagi, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 13/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.


Find Patent Forward Citations

Sarayama, Seiji. (2013). Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group iii nitride semiconductor device (U.S. Patent No. 8562737). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8562737

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