The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2013

Filed:

Mar. 09, 2012
Applicants:

Mitsuru Nakura, Osaka, JP;

Nobuyoshi Awaya, Osaka, JP;

Kazuya Ishihara, Osaka, JP;

Inventors:

Mitsuru Nakura, Osaka, JP;

Nobuyoshi Awaya, Osaka, JP;

Kazuya Ishihara, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 7/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention realizes a semiconductor memory device that can efficiently execute a detection of a data error that might possibly occur in a continuous reading action, and a correction of the error data. The semiconductor memory device uses a variable resistive element made of a metal oxide for storing information. During a reading action of coded data with an ECC in the semiconductor memory device, when a data error is detected by an ECC circuit, a writing voltage pulse having a polarity opposite to a polarity of a reading voltage pulse is applied to all memory cells from which the error is detected so as to correct bits from which the error is detected, on an assumption that an erroneous writing has occurred due to the application of the writing voltage pulse having the polarity same as the polarity of the applied reading voltage pulse.


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