The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Jan. 16, 2009
Matthew N. Sysak, Santa Barbara, CA (US);
John E. Bowers, Goleta, CA (US);
Alexander W. Fang, Santa Barbara, CA (US);
Hyundai Park, Hillsboro, OR (US);
Matthew N. Sysak, Santa Barbara, CA (US);
John E. Bowers, Goleta, CA (US);
Alexander W. Fang, Santa Barbara, CA (US);
Hyundai Park, Hillsboro, OR (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.