The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Dec. 14, 2011
Ki-bum Nam, Suwon-si, KR;
Ki-bum Nam, Suwon-si, KR;
Samsung Electronics Co., Ltd., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A non-volatile memory device and a row decoder, the non-volatile memory device including: a memory cell array comprising a plurality of memory cells and each memory cell includes a first cell transistor and a second cell transistor; and a row decoder comprising a first driver and a second driver for generating first and second control signals. The first cell transistor is connected to the row decoder to receive the first control signal and the second cell transistor is connected to the row decoder to receive the second control signal. The first driver includes a first NMOS transistor and a first PMOS transistor formed adjacent to the first NMOS transistor. The second driver includes a second NMOS transistor and a second PMOS transistor formed adjacent to the second NMOS transistor. The first and second NMOS transistors are disposed between the first PMOS transistor and the second PMOS transistor.