The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2013

Filed:

Jan. 04, 2013
Applicant:

Purdue Research Foundation, West Lafayette, IN (US);

Inventors:

Saeed Mohammadi, Zionsville, IN (US);

Sultan R. Helmi, West Lafayette, IN (US);

Jing-Hwa Chen, West Lafayette, IN (US);

Andrew J. Robison, West Lafayette, IN (US);

Assignee:

Purdue Research Foundation, West Lafayette, IN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

Illustrative embodiments of power amplifiers are disclosed. In one embodiment, a power amplifier includes a plurality of transistors formed on a silicon-on-insulator (SOI) substrate such that the plurality of transistors are each electrically isolated from one another within the SOI substrate. The power amplifier also includes a plurality of biasing networks, each biasing network being configured to dynamically bias at least one of the plurality of transistors. The plurality of transistors are electrically coupled in a series stack, with an output of the power amplifier being provided across the series stack.


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