The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
May. 18, 2011
Srinivas K. Pulijala, Tucson, AZ (US);
Scott C. Mcleod, Oro Valley, AZ (US);
Srinivas K. Pulijala, Tucson, AZ (US);
Scott C. McLeod, Oro Valley, AZ (US);
SMSC Holdings S.A.R.L., Luxembourg, LU;
Abstract
A voltage regulator may derive current from a bias circuitry having a constant-transconductance. The bias circuitry may generate the bias current using three NMOS devices. The temperature coefficient of the bias current may be within a specified, desired range. The bias current may be mirrored to low-power regulator circuitry to bias a diode-connected transistor in the low-power regulator circuitry to operate in the strong inversion region. A ratioed current based on the output load current may be injected into a bipolar junction transistor (BJT) device to cause the gate-source voltage (V) of the diode-connected device to track the Vof the output transistor of the voltage regulator, to ensure tighter load regulation. By operating the diode-connected transistor in strong inversion, by maintaining its (V) constant over temperature, and by cancelling the Vof the output transistor of the voltage regulator with the base-emitter voltage (V) of the BJT device, the regulated voltage output may become free of the effects of temperature and supply voltage.