The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2013

Filed:

Aug. 11, 2006
Applicants:

Chiu-chih Chiang, Hsinchu, TW;

Chih-feng Huang, Hsinchu County, TW;

Ta-yung Yang, Milpitas, CA (US);

Inventors:

Chiu-Chih Chiang, Hsinchu, TW;

Chih-Feng Huang, Hsinchu County, TW;

Ta-yung Yang, Milpitas, CA (US);

Assignee:

System General Corp., New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

The high voltage integrated circuit is disclosed. The high voltage integrated circuit comprises a low voltage control circuit, a floating circuit, a P substrate, a deep N well disposed in the substrate and a plurality of P wells disposed in the P substrate. The P wells and deep N well serve as the isolation structures. The low voltage control circuit is located outside the deep N well and the floating circuit is located inside the deep N well. The deep N well forms a high voltage junction barrier for isolating the control circuit from the floating circuit.


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