The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2013

Filed:

May. 25, 2010
Applicants:

Timothy John Legat, McKinney, TX (US);

Alexander Noam Teutsch, Murphy, TX (US);

Ross Elliot Teggatz, McKinney, TX (US);

Thomas Richard Maher, Rehoboth, MA (US);

Inventors:

Timothy John Legat, McKinney, TX (US);

Alexander Noam Teutsch, Murphy, TX (US);

Ross Elliot Teggatz, McKinney, TX (US);

Thomas Richard Maher, Rehoboth, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device suitable for use in a pressure sensor is disclosed. A uniformly thin die is provided by chemically etching a back side of a wafer. Piezoelectric elements formed integrally within the die generate electrical signals in response to flexing the die. Conductive leads formed integrally within the die electrically communicate the generated electrical signals to support circuitry formed integrally within the die proximate the piezoelectric elements. In an example embodiment, the piezoresistive elements take the form of silicon resistors formed integrally via doping and diffusion in a Wheatstone bridge configuration. In one application, the die serves as a deformable diaphragm, seated atop an aperture of a threaded pressure sensor housing.


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