The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
May. 04, 2009
Applicants:
Il-doo Kim, Seoul, KR;
Dong-hun Kim, Incheon, KR;
Ho-gi Kim, Seoul, KR;
Nam-gyu Cho, Daegu, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01G 4/06 (2006.01); C23C 14/34 (2006.01); C09D 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
a composite dielectric thin film capable of high dielectric constant, low leakage current characteristics, and high dielectric breakdown voltage while being deposited at a room temperature, a capacitor and a field effect transistor (FET) using the same, and their fabrication methods. The composite dielectric thin film is deposited at a room temperature or less than 200° C. and comprises crystalline or amorphous insulating filler uniformly distributed within an amorphous dielectric matrix or within an amorphous and partially nanocrystalline dielectric matrix.