The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Jan. 12, 2011
Hiroji Shimizu, Toyama, JP;
Yoshihiro Sato, Toyama, JP;
Hideyuki Arai, Toyama, JP;
Takayuki Yamada, Toyama, JP;
Tsutomu Oosuka, Toyama, JP;
Hiroji Shimizu, Toyama, JP;
Yoshihiro Sato, Toyama, JP;
Hideyuki Arai, Toyama, JP;
Takayuki Yamada, Toyama, JP;
Tsutomu Oosuka, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal.