The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Apr. 21, 2010
Yoshiki Nakatani, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Yudai Takanishi, Osaka, JP;
Yoshiki Nakatani, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Yudai Takanishi, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The present invention aims at reducing an OFF current in a thin film transistor while maintaining an ON-state current. A TFT () includes a glass substrate () formed thereon with a source electrode () and a drain electrode () having their respective upper surfaces formed with n-type silicon layers () of microcrystalline silicon. Microcrystalline silicon regions () are formed respectively on the n-type silicon layers () while an amorphous silicon region () is formed on the glass substrate (), and these are covered by a microcrystalline silicon layer (). Therefore, ON-state current flows from the drain electrode (), through the microcrystalline silicon region (), the microcrystalline silicon layer () and the microcrystalline silicon region () in this order, and then to the source electrode (). Also, OFF current is limited by the amorphous silicon region ().