The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Apr. 08, 2010
Dong-hoon Lee, Seoul, KR;
Je-hun Lee, Seoul, KR;
Do-hyun Kim, Seongnam-si, KR;
Hee-tae Kim, Yongin-si, KR;
Chang-oh Jeong, Suwon-si, KR;
Pil-sang Yun, Seoul, KR;
Ki-won Kim, Suwon-si, KR;
Dong-Hoon Lee, Seoul, KR;
Je-Hun Lee, Seoul, KR;
Do-Hyun Kim, Seongnam-si, KR;
Hee-Tae Kim, Yongin-si, KR;
Chang-Oh Jeong, Suwon-si, KR;
Pil-Sang Yun, Seoul, KR;
Ki-Won Kim, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.