The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Apr. 25, 2012
Rebecca J. Nikolic, Oakland, CA (US);
Adam M. Conway, Livermore, CA (US);
Daniel Heineck, La Jolla, CA (US);
Lars F. Voss, Livermore, CA (US);
Tzu Fang Wang, Danville, CA (US);
Qinghui Shao, Fremont, CA (US);
Rebecca J. Nikolic, Oakland, CA (US);
Adam M. Conway, Livermore, CA (US);
Daniel Heineck, La Jolla, CA (US);
Lars F. Voss, Livermore, CA (US);
Tzu Fang Wang, Danville, CA (US);
Qinghui Shao, Fremont, CA (US);
Lawrence Livermore National Security, LLC, Livermore, CA (US);
Abstract
Methods for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>10) are provided. A structure is provided that includes a p+ region on a first side of an intrinsic region and an n+ region on a second side of the intrinsic region. The thickness of the intrinsic region is minimized to achieve a desired gamma discrimination factor of at least 1.0E+04. Material is removed from one of the p+ region or the n+ region and into the intrinsic layer to produce pillars with open space between each pillar. The open space is filed with a neutron sensitive material. An electrode is placed in contact with the pillars and another electrode is placed in contact with the side that is opposite of the intrinsic layer with respect to the first electrode.