The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2013

Filed:

Jan. 28, 2010
Applicants:

Jin-wei Chang, Taoyuan County, TW;

Jen-yao Hsu, Hsinchu County, TW;

Hong-xian Wang, Hsinchu, TW;

Yu-hsien Chen, Kaohsiung, TW;

Inventors:

Jin-Wei Chang, Taoyuan County, TW;

Jen-Yao Hsu, Hsinchu County, TW;

Hong-Xian Wang, Hsinchu, TW;

Yu-Hsien Chen, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.


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