The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Feb. 13, 2009
Applicants:
Wataru Shimizu, Saitama, JP;
Ikuo Kurachi, Tokyo, JP;
Inventors:
Wataru Shimizu, Saitama, JP;
Ikuo Kurachi, Tokyo, JP;
Assignee:
Lapis Semiconductor Co., Ltd., Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device, according to the present invention includes the steps of: preparing an SOI substrate, which comprises a semiconductor supporting layer, an oxide layer formed on the semiconductor supporting layer and an SOI layer formed on the oxide layer; forming a semiconductor device on the SOI layer; forming a passivation layer over the SOI substrate, the passivation layer allowing a UV light to pass through it; and applying a UV light to the SOI substrate after the step of forming the semiconductor device is completed.