The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8557567 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 15, 2013

Filed:

Sep. 05, 2006
Applicants:

Bong Hyun Chung, Daejeon, KR;

Sang Kyu Kim, Tsean-gun, KR;

Hye Jung Park, Daejeon, KR;

Inventors:

Bong hyun Chung, Daejeon, KR;

Sang kyu Kim, Tsean-gun, KR;

Hye jung Park, Daejeon, KR;

Assignee:

Micobiomed. Co., Ltd., Daejeon, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C12M 1/34 (2006.01); C12M 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a method of fabricating a nanogap and a nanogap sensor, and to a nanogap and a nanogap sensor fabricated using the method. The present invention relates to a method of fabricating a nanogap and a nanogap sensor, which can be realized by an anisotropic etching using a semiconductor manufacturing process. According to the method of present invention, the nanogap and nanogap sensor can be simply and cheaply produced in large quantities.


Find Patent Forward Citations

Chung, Bong. (2013). Method for fabricating nanogap and nanogap sensor (U.S. Patent No. 8557567). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8557567

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