The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2013

Filed:

Feb. 19, 2009
Applicants:

Youming LI, San Jose, CA (US);

Jeffrey Birkmeyer, San Jose, CA (US);

Takamichi Fujii, Minami-Ashigara, JP;

Takayuki Naono, Kanagawa-ken, JP;

Yoshikazu Hishinuma, Kanagawa-ken, JP;

Inventors:

Youming Li, San Jose, CA (US);

Jeffrey Birkmeyer, San Jose, CA (US);

Takamichi Fujii, Minami-Ashigara, JP;

Takayuki Naono, Kanagawa-ken, JP;

Yoshikazu Hishinuma, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.


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