The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Aug. 08, 2012
Raghuraman Ganesan, San Ramon, CA (US);
AM Moshtaque Yusuf, Cupertino, CA (US);
Raghuraman Ganesan, San Ramon, CA (US);
Am Moshtaque Yusuf, Cupertino, CA (US);
Apple Inc., Cupertino, CA (US);
Abstract
In an embodiment, the design flow is modified to avoid the flattening process but still accurately annotate the transistors with stress parameters. The location-based stress parameters may be generated, but may not be provided to the LVS tool. Instead, a hierarchical LVS process may be performed, black-boxing lower level blocks that already have stress parameter assignments, preserving hierarchy, etc. The output database from LVS thus includes a cross reference between layout devices and schematic devices, as well as locations of the schematic devices. The database may then be queried for the transistors in the non-flattened design, and the stress parameters may be assigned to the transistors based on the location-based stress parameters. In this fashion the stress parameters may be assigned to the desired transistors, permitting annotation of these parameters into the schematics, without flattening the design and doing unnecessary work on blocks to be skipped.