The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Aug. 03, 2011
Jonas Lindstrand, Lund, SE;
Carl Bryant, Lund, SE;
Henrik Sjöland, Löddeköpinge, SE;
ST-Ericsson SA, Plan-les-Ouates, CH;
Abstract
A power amplifier circuit utilizes a cross-coupled tapped cascade topology together with a technique of applying an RF injection current into a wideband node to provide a single-stage power amplifier with improved PAE, output power, and gain over a wide RF band. The amplifier circuit comprises a cross-coupled cascade transistor unit comprising a pair of cross-coupled cascode transistors, a cross-coupled switching transistor unit comprising a pair of cross-coupled switching transistors, and an RF current generator. RF current generator generates a differential RF injection current, while switching transistor unit amplifies the injection current to generate an amplified injection current at the wideband node of the amplifier circuit and the cascode transistor unit further amplifies the injection current to generate the desired amplified signal at the output of the amplifier circuit. The output signal amplitude generally depends on the differential injection current and the supply voltage Vapplied to the power amplifier circuit.