The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Dec. 14, 2009
Michael David Drory, Dublin, NH (US);
Michael David Drory, Dublin, NH (US);
Koninklijke Philips N.V., Eindhoven, NL;
Abstract
The present invention refers to hybrid anode disk structures for use in X-ray tubes of the rotary anode type and is concerned more particularly with a novel light weight anode disk structure (RA) which comprises an adhesion promoting protective silicon carbide (SiC) interlayer (SCI) deposited onto a rotary X-ray tube's anode target (AT), wherein the latter may e.g. be made of a carbon-carbon composite substrate (SUB'). Moreover, a manufacturing method for robustly attaching a coating layer (CL) consisting of a high-Z material (e.g. a layer made of a tungsten-rhenium alloy) on the surface of said anode target is provided, whereupon according to said method it may be foreseen to apply a refractory metal overcoating layer (RML), such as given e.g. by a tantalum (Ta), hafnium (Hf), vanadium (V) or rhenium (Re) layer, to the silicon carbide interlayer (SCI) prior to the deposition of the tungsten-rhenium alloy. The invention thus leverages the tendency for cracking of the silicon carbide coated carbon composite substrate (SUB′) during thermal cycling and enhances adhesion of the silicon carbide/refractory metal interlayers to the carbon-carbon composite substrate (SUB′) and focal track coating layer (CL) by an interlocking mechanism. Key aspects of the proposed invention are: a) controlled formation of coating cracks (SC) in the silicon carbide layer (SCI) and b) conformal filling of SiC crack openings with a refractory metal.