The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2013

Filed:

Dec. 20, 2010
Applicant:

Fung-hsu Wu, Gueishan Township, Taoyuan County, TW;

Inventor:

Fung-Hsu Wu, Gueishan Township, Taoyuan County, TW;

Assignee:

BenQ Materials Corp., Taoyuan County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1335 (2006.01);
U.S. Cl.
CPC ...
Abstract

A patterned retarder film with a plurality of first retardation regions and a plurality of second retardation regions and a method for manufacturing the same are provided. The method includes providing a base film; forming an alignment layer on a first surface of the base film; coating a liquid crystal material on the alignment layer as a liquid crystal layer; aligning the liquid crystal layer with the alignment layer; embossing the liquid crystal layer with a predetermined pattern to form a patterned layer with a plurality of first and second retardation regions. The structure of the first and second retardation regions are grating-like stripe structure and parallel to each other and the structure of the second retardation regions are grooving-like stripe structure and interleaved with each other. The patterned liquid crystal layer is cured. The phase retardation of the first and second retardation regions is different by 180°.


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