The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Aug. 23, 2011
Applicants:
Tatsuo Shimizu, Tokyo, JP;
Satoshi Itoh, Ibaraki, JP;
Hideyuki Nishizawa, Tokyo, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 21/20 (2006.01); H01L 21/3205 (2006.01); G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device according to an embodiment, includes a dielectric film and an Si semiconductor part. The dielectric film is formed by using one of oxide, nitride and oxynitride. The Si semiconductor part is arranged below the dielectric film, having at least one element of sulfur (S), selenium (Se), and tellurium (Te) present in an interface with the dielectric film, and formed by using silicon (Si).
Shimizu, Tatsuo. (2013). Semiconductor device and method for fabricating the same (U.S. Patent No. 8552537). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8552537
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile