The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Mar. 11, 2010
Takuya Adachi, Niigata-ken, JP;
Katsuya Kikuiri, Niigata-ken, JP;
Tetsuya Fukuda, Niigata-ken, JP;
Hisanobu Okawa, Niigata-ken, JP;
Takayuki Minagawa, Niigata-ken, JP;
Takuya Adachi, Niigata-ken, JP;
Katsuya Kikuiri, Niigata-ken, JP;
Tetsuya Fukuda, Niigata-ken, JP;
Hisanobu Okawa, Niigata-ken, JP;
Takayuki Minagawa, Niigata-ken, JP;
ALPS Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same width as the width of the cavity at a desired section in the one silicon substrate and reducing the width of the cavity from the boundary portion toward the diaphragm center.