The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Dec. 24, 2009
Jiro Yugami, Kanagawa, JP;
Jiro Yugami, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A p-type MIS transistor Qp arranged in a pMIS region Rp of a silicon substrate 1 includes a pMIS gate electrode GEp formed so as to interpose a pMIS gate insulating film GIp formed of a first insulating film zand a first high-dielectric film hk, and an n-type MIS transistor Qn arranged in an nMIS region Rn includes an nMIS gate electrode GEn formed so as to interpose an nMIS gate insulating film GIn formed of a first insulating film zand a second high-dielectric film hk. The first high-dielectric film hkis formed of an insulating film mainly made of hafnium and oxygen with containing aluminum, titanium, or tantalum. Also, the second high-dielectric film hkis formed of an insulating film mainly made of hafnium, silicon, and oxygen with containing an element of any of group Ia, group IIa, and group IIIa.