The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Sep. 22, 2010
Kazuhiko Sanada, Kanagawa, JP;
Hiroshi Kawaguchi, Kanagawa, JP;
Kazuhiko Sanada, Kanagawa, JP;
Hiroshi Kawaguchi, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A trench gate transistor whose gate changes the depth thereof intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The sum of length measurements of the underlying portion of the second offset region measured from the lower corner of the trench in a direction parallel to the substrate and in a direction perpendicular to the substrate is 0.1 μm or greater.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile