The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Apr. 24, 2012
Applicants:
Robert K. Henderson, Edinburgh, GB;
Justin Richardson, Edinburgh, GB;
Inventors:
Robert K. Henderson, Edinburgh, GB;
Justin Richardson, Edinburgh, GB;
Assignee:
STMicroelectronics (Research & Development) Limited, Marlow, Buckinghamshire, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.