The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Sep. 27, 2007
Shuichi Kikuchi, Gunma, JP;
Shigeaki Okawa, Tochigi, JP;
Kiyofumi Nakaya, Saitama, JP;
Shuji Tanaka, Gunma, JP;
Shuichi Kikuchi, Gunma, JP;
Shigeaki Okawa, Tochigi, JP;
Kiyofumi Nakaya, Saitama, JP;
Shuji Tanaka, Gunma, JP;
SANYO Semiconductor Co., Ltd., Gunma, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.