The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
May. 04, 2009
Applicants:
Abdelaziz Ikhlef, Hartland, WI (US);
Wen LI, Clifton Park, NY (US);
Jeffrey Alan Kautzer, Pewaukee, WI (US);
Inventors:
Abdelaziz Ikhlef, Hartland, WI (US);
Wen Li, Clifton Park, NY (US);
Jeffrey Alan Kautzer, Pewaukee, WI (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
Abstract
A photodiode element includes a first layer of a first diffusion type and a second layer. The second layer defines a charge-collecting area. The charge-collecting area includes an active region of a second diffusion type and an inactive region. The active region surrounds the inactive region. The photodiode element also includes an intrinsic semiconductor layer between the first layer and the second layer.