The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Sep. 07, 2010
Jong Lam Lee, Pohang-Si, KR;
Yang Hee Song, Seongnam-si, KR;
Jun Ho Son, Pohang-si, KR;
Buem Joon Kim, Goyang-si, KR;
Jong Lam Lee, Pohang-Si, KR;
Yang Hee Song, Seongnam-si, KR;
Jun Ho Son, Pohang-si, KR;
Buem Joon Kim, Goyang-si, KR;
Seoul Opto Device Co., Ltd., Ansan-si, KR;
Postech Academy-Industry Foundation, Pohang-si, KR;
Abstract
Provided is a semiconductor light-emitting diode including a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer. The nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting diode of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained.