The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2013

Filed:

Dec. 26, 2008
Applicants:

Yohei Wakai, Anan, JP;

Hiroaki Matsumura, Anan, JP;

Kenji Oka, Anan, JP;

Inventors:

Yohei Wakai, Anan, JP;

Hiroaki Matsumura, Anan, JP;

Kenji Oka, Anan, JP;

Assignee:

Nichia Corporation, Anan-Shi, Tokushima, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting deviceis provided with an n-electrode, which is arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stackis mounted on a substrate. A plurality of convexes are arranged on a first convex regionand a second convex regionon the light extraction surface. The second convex regionadjoins to the interface between the n-electrodeand the semiconductor stack, between the first convex regionand the n-electrode. The base end of the first convex arranged in the first convex regionis positioned closer to alight emitting layerthan the interface between the n-electrodeand the semiconductor stack, and the base end of the second convex arranged in the second convex regionis positioned closer to the interface between the n-electrodeand the semiconductor stackthan the base end of the first convex.


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