The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Nov. 13, 2008
Yoshiyuki Ide, Kagoshima, JP;
Hidenori Kamei, Kagoshima, JP;
Isamu Yonekura, Kagoshima, JP;
Kunihiko Obara, Kagoshima, JP;
Koichi Nakahara, Kagoshima, JP;
Kouji Nakatsu, Kagoshima, JP;
Yoshirou Tooya, Kagoshima, JP;
Toshirou Kitazono, Kagoshima, JP;
Toshihide Maeda, Kagoshima, JP;
Kenichi Koya, Kagoshima, JP;
Takahiro Shirahata, Hyogo, JP;
Yoshiyuki Ide, Kagoshima, JP;
Hidenori Kamei, Kagoshima, JP;
Isamu Yonekura, Kagoshima, JP;
Kunihiko Obara, Kagoshima, JP;
Koichi Nakahara, Kagoshima, JP;
Kouji Nakatsu, Kagoshima, JP;
Yoshirou Tooya, Kagoshima, JP;
Toshirou Kitazono, Kagoshima, JP;
Toshihide Maeda, Kagoshima, JP;
Kenichi Koya, Kagoshima, JP;
Takahiro Shirahata, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices. Thus, a semiconductor light-emitting device having a reflective layer on its side surfaces can be obtained.