The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Dec. 20, 2010
Jeonghee Park, Hwaseong-si, KR;
Hideki Horii, Seoul, KR;
Hyeyoung Park, Seongnam-si, KR;
Jin Ho OH, Seongnam-si, KR;
Hyun-suk Kwon, Seoul, KR;
Jeonghee Park, Hwaseong-si, KR;
Hideki Horii, Seoul, KR;
Hyeyoung Park, Seongnam-si, KR;
Jin Ho Oh, Seongnam-si, KR;
Hyun-Suk Kwon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
Provided are a variable resistance memory device and a method of forming the same. The variable resistance memory device may include a substrate, a plurality of bottom electrodes on the substrate, and a first interlayer insulating layer including a trench formed therein. The trench exposes the bottom electrodes and extends in a first direction. The variable resistance memory device further includes a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction and a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode.