The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2013

Filed:

Sep. 22, 2011
Applicants:

Michael Rennie, Mechanicsville, VA (US);

Thomas J. Knight, Silver Spring, MD (US);

Inventors:

Michael Rennie, Mechanicsville, VA (US);

Thomas J. Knight, Silver Spring, MD (US);

Assignee:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods are provided for forming a capacitor. In one embodiment, a method comprises providing an insulator material layer over a substrate, etching at least one via in the insulator material layer and depositing a contact material fill in the at least one via to form a first set of contacts. The method further comprises etching the insulator material layer adjacent at least one contact of the first set of contacts to form at least one void, depositing a dielectric material layer over the at least one void and over the first set of contacts and depositing a contact material fill in the at least void to form a second set of contacts.


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