The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Apr. 27, 2012
Jonas Ohlsson, Malmo, SE;
Lars Samuelson, Malmo, SE;
Erik Lind, Malmo, SE;
Lars-erik Wernersson, Lund, SE;
Truls Lowgren, Malmo, SE;
Jonas Ohlsson, Malmo, SE;
Lars Samuelson, Malmo, SE;
Erik Lind, Malmo, SE;
Lars-Erik Wernersson, Lund, SE;
Truls Lowgren, Malmo, SE;
QuNano AB, Lund, SE;
Abstract
The present invention relates to providing layers of different thickness on vertical and horizontal surfaces () of a vertical semiconductor device (). In particular the invention relates to gate electrodes and the formation of precision layers () in semiconductor structures comprising a substrate () and an elongated structure () essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device () is utilized in combination with either anisotropic desposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.