The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Feb. 20, 2013
Yong-hwan Park, Yongin, KR;
Kyu-sik Cho, Yongin, KR;
Sang-ho Moon, Yongin, KR;
Byoung-kwon Choo, Yongin, KR;
Min-chul Shin, Yongin, KR;
Tae-hoon Yang, Yongin, KR;
Bo-kyung Choi, Yongin, KR;
Won-kyu Lee, Yongin, KR;
Yun-gyu Lee, Yongin, KR;
Joon-hoo Choi, Yongin, KR;
Yong-Hwan Park, Yongin, KR;
Kyu-Sik Cho, Yongin, KR;
Sang-Ho Moon, Yongin, KR;
Byoung-Kwon Choo, Yongin, KR;
Min-Chul Shin, Yongin, KR;
Tae-Hoon Yang, Yongin, KR;
Bo-Kyung Choi, Yongin, KR;
Won-Kyu Lee, Yongin, KR;
Yun-Gyu Lee, Yongin, KR;
Joon-Hoo Choi, Yongin, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Abstract
An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.