The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Jun. 24, 2009
Jang-ik Park, Suwon-si, KR;
Chung-sam Jun, Suwon-si, KR;
Hwan-shik Park, Seoul, KR;
Ji-hye Kim, Anyang-si, KR;
Kwan-woo Ryu, Hwaseong-si, KR;
Kong-jung SA, Hwaseong-si, KR;
So-yeon Yun, Hwaseong-si, KR;
Jang-Ik Park, Suwon-si, KR;
Chung-Sam Jun, Suwon-si, KR;
Hwan-Shik Park, Seoul, KR;
Ji-Hye Kim, Anyang-si, KR;
Kwan-Woo Ryu, Hwaseong-si, KR;
Kong-Jung Sa, Hwaseong-si, KR;
So-Yeon Yun, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.